Articles : ORCID

 

2020

  1. Journal of Physical Chemistry C (2020) (DOI 10.1021/acs.jpcc.0c02378)
    Dynamics of Gold  droplet formation on SiO2/Si(111) surface
    Hadi Hijazi, Fréderic Leroy, Guillaume Monier, Gabin Grégoire, Evelyne Gil, Agnès Trassoudaine, Vladimir G. Dubrovskii, Dominique Castellucci, Nebile Isik Goktas, Ray R. LaPierre, Yamina André,  Christine Robert-Goumet
  2. Eur. Phys. J. Plus (2020) 135:895  (DOI 10.1140/epjp/s13360-020-00916-5)
    A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extraction electrical parameters
    H. Helal, Z. Benamara, B. Gonzalez Perez, A.H. Kacha, A. Rabehi, M.A. Wederni, S. Mourad, K. Khirouni, G. Monier, C. Robert-Goumet
  3. Nano Express 1 (2020) 020019 (DOI 10.1088/2632-959X/aba7f1)
    Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
    Y. André, N.I. Goktas, G. Monier, H. Hijazi, H. Mehdi, C. Bougerol, L. Bideux, A. Trassoudaine, D. Paget, J. Leymarie, E. Gil, C. Robert-Goumet, R. R. LaPierre
  4. Vacuum 172 (2020) 109097 (doi.org/10.1016/j.vacuum.2019.109097)
    The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE
    S. Naceur, M. Choubani, B. Smiri, H. Maaref, G. Monier, C. Robert-Goumet, L. Sfaxi, B. Gruzza, and R. Mghaieth

 

2019

  1. Nano Lett. (2019)19, 7, 4498-4504 (DOI: 10.1021/acs.nanolett.9b01308)
    Si doping of vapor-liquid-solid GaAs nanowires: n-type or p-type?
    H. Hadi, G. Monier, E. Gil, A. Trassoudaine, C. Bougerol, C. Leroux, D. Castelluci, C. Robert-Goumet, P. Hoggan, Y. André, N. Isik Goktas, R. LaPierre, V. Dubrovskii

  2. Applied Surface Science, 495 (2019) 143586 (DOI : 10.1016/j.apsusc.2019.143586)
    Study of GaN layer crystallization on GaAs(001) using Electron cyclotron resonance or Glow discharge N2 plasma sources for the nitriding process
    H. Mehdi, F. Reveret, C. Bougerol, C. Robert-Goumet, P. E. Hoggan, L. Bideux, B. Gruzza, J. Leymarie, G. Monier

  3. Applied Surface Science (2019) 465 787-794 (DOI 10.1016/j.apsusc.2018.09.244)
    DFT and experimental FTIR investigations of early stages of (001) and (111)B GaAs surface nitridation
    G. Monier, P.E. Hoggan, L. Bideux, C. Robert-Goumet, D. Paget, H. Mehdi, S. Kubsky, P. Dumas, C. Robert-Goumet

  4. Superlattices and Microstructures 135 (2019) 106276 (doi.org/10.1016/j.spmi.2019.106276)
    Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes
    H. Helal , Z. Benamara, A. H. Kacha, M. Amrani, A. Rabehi, G. Monier, C. Robert-Goumet

 

2018

  1. The Journal of Physical Chemistry C 122 (2018) 19230-19235
    (DOI: 10.1021/acs.jpcc.8b05459)
    Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
    H. Hijazi, V. Dubrovskii, G. Monier, E. Gil, C. Leroux, G. Avit, A Trassoudaine, C. Bougerol, D. Castelluci, C. Robert Goumet, Y. Andre
  2. Applied Surface Science, 444 (2018) 293-302 (DOI 10.1016/j.apsusc.2018.03.040)
    Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering
    A. Bachar, A. Bousquet, H. Mehdi, G. Monier, C. Robert-Goumet, L. Thomas, M. Belmahi, A. Goullet, T. Sauvage, E. Tomasella
  3. Applied Surface Science 451 (2018) 191-197 (DOI 10.1016/j.apsusc.2018.04.231)
    Thiol-functionalization of Mn5Ge3 thin films
    M.K. Schütz, M.Petit, L. Michez, A. Ranguis, G. Monier, C. Robert-Goumet, J.M.  Raimundo
  4. Ultramicroscopy 188 (2018) 13–18 (DOI 10.1016/j.ultramic.2018.02.008)
    Multi-Mode Elastic Peak Electron Microscopy (MM-EPEM): A new imaging technique with an ultimate in-depth resolution for surface analysis
    M.A. Mahjoub, G. Monier, L. Bideux, B. Gruzza, C. Robert-Goumet
  5. Applied Surface Science 427 (2018) 662–669 (DOI 10.1016/j.apsusc.2017.08.002)
    Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide
    H. Mehdi, G. Monier, P.E. Hoggan, L. Bideux, C. Robert-Goumet, V.G. Dubrovskii

 

2016

  1. J. Phys. Chem. C, 120 (21), (2016)  11652–11662
    Synthesis and Study of Stable and Size-Controlled ZnO-SiO2 Quantum Dots: Application as humidity sensor
    M.A. Mahjoub, G. Monier, C. Robert-Goumet, F. Reveret, M. Echabaane, D. Chaudanson, M. Petit, L. Bideux, B. Gruzza
  2. Molecular Crystals and Liquid Crystals 627 (2016) 66-73
    Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
    A. H. Kacha, B. Akkal, Z. Benamara, C. Robert-Goumet, G. Monier, and B. Gruzza

 

2015

  1. Applied Surface Science 357 (2015) 1268-1273
    XPS combined with MM-EPES technique for in situ study of ultra thin film deposition : application to an Au/SiO2/Si structure
    M.A. Mahjoub, G. Monier, C. Robert-Goumet,  L. Bideux, B. Gruzza
  2. Supperlattices and Microstructures 83 (2015) 827-233
    Effect of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
    A.H. Kacha, B. Akkal, Z. Benamara, M. Amrani, A. Rabhi, G. Monier, C. Robert-Goumet, L. Bideux, B. Gruzza
  3. Eur. Phys. J. Appl. Phys. 72 (2015)10102, 1-6
    Study of the Characteristics Current–Voltage and Capacitance–Voltage in nitride GaAs Schottky diode
    A.Rabehi, M. Amrani, Z. Benamara, B. Akkal, A. H. Kacha, C. Robert-Goumet, G. Monier, B.     Gruzza

2014

  1. Surface and Interface Analysis 46 (2014)283-288
    Energy dependance of the energy loss function parametrization of indium in the Drude-Lindhard model
    N. Pauly, A. Dubus, G. Monier, C. Robert-Goumet, M.A. Mahjoub, L. Bideux, B. Gruzza
  2. Nano Lett. 14 (2014) 3938-3944
    Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
    E. Gil, V. Dubrovskii, G. Avit, Y. André,  C. Leroux, K. Lekhal, J. Grecenkov, A. Trassoudaine, D. Castelluci, G. Monier, R. Ramdani, C. Robert-Goumet, L. Bideux, J.C. Harmand, F. Glas
  3. Journal of Electron Spectroscopy and Related Phenomena 197 (2014) 80-87
    New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images in press
    M.A. Mahjoub, G. Monier, C. Robert-Goumet, L. Bideux, B. Gruzza

2013

  1. Surface Science 618 (2013) 72-77
    Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis – Application to different Si(111) nanoporous surfaces.
    C. Robert-Goumet, M.A. Mahjoub, G. Monier, L. Bideux, S. Chelda, R. Dupuis, M. Petit, P. Hoggan, B. Gruzza
  2. Advanced Materials Research Vol. 685 (2013) 179-184
    Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range
    M. A. Benamara, A. Talbi, Z. Benamara, B. Akkal, N. Chabane Sari, B. Gruzza , C. Robert-Goumet


2012

  1. Phys. Status Solidi C, 1–4 (2012)
    Carbon diffusion and reactivity in Mn5Ge3 thin films
    M. Petit, M.T.Dau, G. Monier, L. Michez, X. Barre, A. Spiesser, V. Le Thanth, A. Glachant, C. Coudreau, L. Bideux, C. Robert-Goumet
  2. Surface Science (2012) Vol 606, Issues 13–14, 1093-1099
    Passivation of GaAs (001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source
    G. Monier, L. Bideux, C. Robert-Goumet, B. Gruzza, M. Petit, J. L. Lábár, M.Menyhárd
  3. Solid State Electronics (2012) Vol 72, Pages 29-37
    Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing
    C. Varenne, A. Ndiaye, J. Brunet, L. Spinelle, G. Monier, A. Pauly, L. Bideux, B. Lauron, C. Robert-Goumet

2011

  1. Sensor Letters, vol 9, 2268-2271 (2011)
    Study of the Characteristics Current–Voltage and Capacity–Voltage of Hg/GaN/GaAs Structures
    K. Ameur, H. Mazari, S. Tizi, R. Khelifi, Z. Benamara, N. Benseddik, A. Chaib, N. Zougagh, M. Mostefaoui, L. Bideux, G. Monier, B. Gruzza, and C. Robert-Goumet

 

2010

  1. Surface Science, 604 (2010) 217-226
    Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials : effects of surface structure and excitation
    B. Gruzza, S.Chelda, C. Robert-Goumet, L. Bideux, G. Monier
  2. Nano Lett., 10(5) (2010), 1836–1841
    Fast growth synthesis of GaAs nanowires with exceptional length
    M.R. Ramdani, E. Gil, C. Leroux, Y. André, A. Trassoudaine, D. Castelluci, L. Bideux, G. Monier, C. Robert-Goumet, R. Kupka
  3. Metalurgia International 15 (2010) 5-9
    M. Flori, B. Gruzza, L. Bideux, G. Monier, C. Robert-Goumet, M. Krawczyk
    Surface analysis of a plasma-nitrided structural steel


2009

  1. Surface Science, 603 (2009) 2923-2927
    SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling
    AAO templates and low energy Ar+ ion sputtering
    C. Robert-Goumet, G. Monier, B. Zefack, S. Chelda, L. Bideux, B. Gruzza, O.K.Awitor
  2. Journal of Crystal Growth 311 (2009) 2608-2614
    S.Ben Khalifa, F.Saidi, C.Robert-Goumet, B.Gruzza, H.Maaref, L.Bideux, F.Hassen
    Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence.
  3. Applied Surface Science, Volume 256, Issue 1, 15 October 2009, Pages 56-60
    XPS study of the O2/SF6 microwave plasma oxidation of (011) GaAs surfaces
    G. Monier, L. Bideux, O. Desplats, C. Fontaine, C. Robert-Goumet, B. Gruzza
  4. Applied Surface Science, Volume 255, Issue 22, 30 August 2009, Pages 9206-9210
    First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements
    M. Flori, B. Gruzza, L. Bideux, G. Monier, C. Robert-Goumet, Z. Benamara
  5. Sensor Letters, Volume 7, Number 5, October 2009 , pp. 712-715(4)
    Z. Benamara, N. Mecirdi, B. Akkal, H. Mazari, M. Chellali, B. Gruzza, S. Ben Khalifa, C. Robert-Goumet, G. Monier, L. Bideux
    Electrical characterization and electronic transport modelization in the InN/InP structures 
  6. Accepté à Sensor Letter (2009)
    Electrical characterization of n+-GaAs/GaN-n heterojunction, with quantum effect
    N. Mecirdi, Z. Benamara, N. Bachir Bouiadjra, B. Gruzza, L. Bideux, C. Robert

 

2008

  1. Surface Science, 602 (2008), 2114-2120
    S. Chelda, C. Robert-Goumet, B. Gruzza, L. Bideux, G. Monier
    “Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces”
  2. Applied Surface Science, Volume 254, Issue 15, (2008) 4738-4743
    A study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy
    M. Flori, B. Gruzza, L. Bideux, G. Monier, C. Robert-Goumet
  3. Surface and Coatings Technology, Volume 202, Issue 24, 15 August 2008, Pages 5887-5894
    XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steel
    M. Flori, B. Gruzza, L. Bideux, G. Monier, C. Robert-Goumet, J.P. Cherré, H. de Baynast
  4. Applied Surface Science, Volume 254, Issue 13, (2008) 4150-4153
    L. Bideux, G. Monier, V. Matolin, C. Robert-Goumet, B. Gruzza
    XPS study of the formation of ultrathin GaN film on GaAs(100)
  5. Journal of Luminescence, Volume 128 (2008) 1611-1616
    S.Ben Khalifa, B.Gruzza, C.Robert-Goumet, M.Hjiri, L.Bideux, F.Saidi, L.Bèji, G.Bremond, H.Maaref
    Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching


2007

  1. Applied Surface Science 253 (2007) 4445-4449
    Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of Indium Nitride on InP(100) - Effect of annealing at 450°C -
    C. Robert-Goumet, M. Petit, L. Bideux, G. Monier, B. Gruzza, V. Matolin, T. Skala, N. Tsud, K.C. Prince
  2. Surface Science 601 (2007) 3722
    Interaction of hydrogen with InN thin films elaborated on InP(100)
    M. Krawczyk, A. Bili?ski, J.W. Sobczak, S. Ben Khalifa, C. Robert-Goumet, L. Bideux, B. Gruzza, G. Monier
  3. Surface Science 601 (2007) 4531
    Study of porous III-V Semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL). Effect of ionic bombardment and nitridation process
    S. Ben Khalifa, B. Gruzza, C. Robert-Goumet, L. Bideux, G. Monier, F. Saidi, R. M’Ghaieth, M. Hjiri, R. Hamila, F. Hassen , H. Maaref, G. Bremond, L. Beji


2006

  1. Applied Surface Science, Volume 252, Issue 22, 2006, Pages 7890-7894
    XPS, electric and photoluminescence-based analysis of the GaAs(100) nitridation
    Z. Benamara, N. Mecirdi, B. Bachir Bouiadjra, L. Bideux, B. Gruzza, C. Robert, M. Miczek, B. Adamowicz
  2. Materials Science and Engineering: C, Volume 26, Issues 2-3, (2006), Pages 378-382
    Room temperature photoluminescence studies of nitrided InP(100) surfaces
    S. Arabasz, B. Adamowicz, M. Petit, B. Gruzza, Ch. Robert-Goumet, T. Piwonski, M. Bugajski and H. Hasegawa
  3. Materials Science and Engineering A 437(2006) 254-258
    Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
    A. Talbi, Z. Benamara, B. Akkal, B. Gruzza, L. Bideux, C. Robert, C. Varenne, N. Chami


2005

  1. Surf. Interface Anal. 2005; 37: 615–620
    Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies
    M. Petit, C. Robert-Goumet,1 L. Bideux, B. Gruzza, V. Matolin,S. Arabasz, B. Adamowicz, D. Wawerand M. Bugajski


2004

  1. Applied Surface Science, Volume 234, Issues 1-4, (2004), Pages 451-456
    Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
    M. Petit, Ch. Robert-Goumet, L. Bideux, B. Gruzza, Z. Benamara, N. Bachir Bouiadjra and V. Matolin
  2. Surface Science 566–568 (2004) 856–861
    IMFP measurements near Au–Ni alloy surfaces by EPES: indirect evidence of submonolayer Au surface enrichment
    M. Krawczyk, L. Zommer, J.W. Sobczak, A. Jablonski, M. Petit, C. Robert-Goumet, B. Gruzza
  3. Surface science (2004) , Volume : 566-68 , p. : 1158 – 1162
    Surface modification of GaAs during argon ionic cleaning and nitridation: EELS, EPES and XPS studies 
    L. Bideux, D. Baca, B. Gruzza, V. Matolin and C. Robert-Goumet
  4. Proceeding Elspec’2004
    Première Conférence Francophone sur les spectroscopies d’Electrons .
    La spectroscopie des électrons élastiques et l’analyse des surfaces par EPES (Elastic peak electron spectroscopy)
    B. Gruzza, P. Tomkiewicz, C. Robert-Goumet, L. Bideux


2003

  1. Appl. surf. sci., 2003 , vol. 212-13 , pp. 601 – 606
    M. Petit, Y. Ould-Metidji, Ch. Robert,  L. Bideux, B. Gruzza, V. Matolin
    First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPES
  2. Applied Surface Science, Volume 212-213, (2003), Pages 667-673
    EPES applied to the study of gold/alumina interfaces
    B. Gruzza, C. Robert and L. Bideux

2002

  1. Vacuum 67 (2002) 125-129
    B. Gruzza, B. Akkal, L. Bideux, Z. Benamara, S. Merle, C. Robert
    Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
  2. Materials Sciences and Engineering C 21 (2002) 1-2 p237-240
    B. Gruzza, C. Robert, L. Sfaxi, L. Bouzaiene, F. Hassen, H. Maaref
    Study of AlxGa1-xAs/GaAs heterostructures by EPES method
  3. Surf. interface anal.., 2002 , vol. 33 , no 1 , pp. 23 – 28
    M. Krawczyk, A. Jablonski, L. Zommer, J. Toth, D. Varga, L. Kover, G. Gergely, M. Menyhard, A. Sulyok, Zs Bendek, B. Gruzza, C. Robert
    Determination of inelastic mean free paths for AuPd alloys by elastic peak electron spectroscopy (EPES)


2001

  1. Applied Surface Science, 175-176 (2001) p656-662
    B.Gruzza, S.Merle, L.Bideux, C.Robert, L.Kover, J.Toth, V.Matolin
    UHV aluminium oxide on silicon substrates : electron spectroscopies analysis and electrical measurements.
  2. Vacuum 63 (2001) 229-232
    Y. Ould-Metidji, L. Bideux, V. Matolin, B. Gruzza, C. Robert
    Nitridation of InP(100) surface studied by AES and EELS spectroscopies.
  3. Vacuum  (2001) , vol. 62 , no 4 , pp. 315 - 320
    S. Tizi, Z. Benamara, M. Chellali, A. Talbi, B. Gruzza, S. Merle, C. Robert
    “Effect of InSb buffer layer in MIS structures based on InP”
  4. Surface and Interface Analysis 31 (2001) 415-420
    M. Krawczyk, L. Zommer, A. Jablonski, C. Robert, J. Pavluch, L. Bideux, B. Gruzza
    Electron inelastic mean free paths (IMFPs) in binary Au-Cu alloys determined by elastic peak electron spectroscopy


2000

  1. Mater. sci. eng., B, Solid-state mater. adv. technol., vol. 77 , no 1 (2000), 19 - 23
    M. Chellali, B. Akkal, S. Tizi, Z. Benamara, B. Gruzza, C. Robert, L. Bideux
    Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
  2. Surf. Interface Anal. 30 (2000) 341-345
    C. Robert, S. Zuber, L. Bideux, S. Merle, B. Gruzza, V. Nehasil, V. Matolin
    Angular distribution of electrons elastically reflected from polycrystalline metals : Pd, In
  3. Surf. Interface Anal. 30 (2000) 202-206
    D. Varga, L. Kover, J. Toth, K. Tokesi, B. Lesiak, A. Jablonski, C. Robert, B. Gruzza, L.Bideux
    Determination of yield ratios of elastically backscattered electrons for deriving inelastic mean free paths in solids

1999

  1. Applied Surface Science 144-45 (1999) 173-177
    G. Gergely, A. Sulyok, M. Menyhard, J. Toth, D. Varga, A. Jablonski, M. Krawczyk, B. Gruzza, L. Bideux, C . Robert
    Experimental determination of the inelastic mean free path of electrons in GaSb and InSb
  2. Microelectronics Journal 30 (1999) 625-629
    B. Gruzza, C. Robert, L. Bideux, J.M. Guglielmacci
    A study of the Au/Pd interface formation using the EPES method
  3. Applied Surface Science 142 (1999) 465-469
    S. Zuber, V. Nehasil, J. Pavluch, C. Robert, B. Gruzza, V. Matolin
    Abilities of EPES in the field of the thin films growth investigation : Au on Al2O3
  4. Journal of Surface Analysis vol 5 (1999) n°1 90-93
    B. Gruzza, C. Robert, L. Bideux, B. Peuchot, A. Jablonski
    Angular distribution of elastically backscattered electrons and the depth of electron penetration
  5. Vacuum 54 (1999) 201-204
    G. Gergely, A. Barna, A. Sulyok, C. Jardin, B. Gruzza, L. Bideux, C. Robert, J. Toth, D. Varga
    Crystalline effects in elastic peak electron spectroscopy


1998

  1. Thin Solid Films 317 (1998) 210-213
    C. Robert, L. Bideux, B. Gruzza, M. Cadoret, T. Lohner, M. Fried, E. Vazsonyi, G. Gergely
    "Spectroellipsometry and electron spectroscopy of porous Si thin films on p+ substrates"
  2. Surface and Interface Analysis 26 (1998) 177-181
    L. Bideux, S. Merle, C. Robert, B. Gruzza, Z. Benamara, S. Tizi, M. Chellali
    "Passivation of III-V compounds used for Metal-Insulator-InP(100) structures"
  3. Mathematics and Computers in Simulation 47 (1998) 419-427
    C. Robert, B. Gruzza, L. Bideux, P. Bondot
    "A Monte Carlo study for electron elastic backscattering based on layered models for substrates"
  4. Vacuum 50 (1998) n°1-2, 237-242
    B. Gruzza, C. Robert, B. Peuchot, L. Bideux
    "Electrons elastically backscattered from Al, Ag and Au samples"
  5. Surface and Interface analysis 26 (1998) 903-907
    L. Bideux, C. Robert, S. Merle, B. Gruzza, E. Goumet, E. Gil-Lafon
    Some applications of elastic peak electron spectroscopy for semiconductor surface studies


1997

  1. Applied Surface Science 115 (1997) 111-115
    C.Robert, L. Bideux, B. Gruzza, E. Vazsonyi, G. Gergely
    "Elastic reflection of electrons by porous silicon layers (PSL) surfaces. Effects of porosity"
  2. Semicond. Sci. Technol. 12 (1997) 1429-1432
    C. Robert, L. Bideux, B. Gruzza, T. Lohner, M. Fried, A. Barna, K. Somogyi, G. Gergely
    "Ellipsometry of Al2O3 thin films deposited on Si and InP"
  3. Synthetic Metals 90 (1997) 229-232
    Z. Benamara, S. Tizi, M. Chellali, B. Gruzza, L. Bideux, C. Robert
    "Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates"


1996

  1. Surface Science 352/354 (1996) 407-410
    L.Bideux, C.Robert, B.Gruzza, V.Matolin, Z.Benamara
    " Study of Al2O3condensation on Si(100) and InP(100) substrates"
  2. Thin Solid Film, vol 289, 1-2 (1996) 295-299
    V. Matolin, V. Nehasil, L. Bideux, C.Robert, B. Gruzza
    "Vacuum evaporation of thin alumina layers"


1995

  1. Vacuum, 46, 5/6 (1995), 493-495
    B.Gruzza, L.Bideux, C.Robert, G.Salace, E.Vazsonyi, G.Peto, L.Guczi, G.Gergely
    " Interdisciplinary surface studies on porous silicon Si (PSi) - I - Elastic peak electron spectroscopy (EPES), valence band XPS and atomic force microscopy (AFM)."